生產(chǎn)廠商：HQ Graphene

產(chǎn)品信息

GeS is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group-14 transition metal monochalcogenides. 

The GeS crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance. 

硫化鍺晶體 GeS(Germanium Sulfide)
晶體尺寸：~10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：斜方晶系
晶胞參數(shù)：a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a single crystal GeS aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeS. Measurement was performed with a 785 nm Raman system at room temperature.